X-Fab And Exagan Produce First Gan-On-Si Devices On 200-Mm Wafers

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X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan’s GaN-on-silicon Exagan and X-FAB have successfully resolved many of the challenges related to material stress, defectivity and process integration while using standard fabrication equipment The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise

X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have

Exagan and X-FAB Produce First GaN-on-Silicon ICs on 200-mm Wafers

X-FAB announces new integrated passive device (IPD) fabrication ...

Leti-and-Soitec Spinout Focused on Becoming Leading European Source Of GaN Devices for Solar, Automotive, Telecoms and Infrastructure. Exagan, a start-up innovator of gallium-nitride X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have Erfurt, Germany and Grenoble, France – May 10, 2017 – X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and

X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have Extending the already feature rich CMOS technologies, X-FAB is working on solutions for 3D Heterogeneous integration, TSV and wafer level packaging. These

X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have As the largest specialty foundry group, X-FAB is unlike typical foundry services because of its specialized expertise in advanced analog and mixed-signal process technologies. – Don’t miss

The new GaN-on-silicon devices have been built using substrates fabricated at Exagan’s 200mm epi-manufacturing facility in France.

The partnership able to produce GaN-on-silicon devices built on 200mm substrates at X-FAB’s wafer fab in Dresden, Germany and now working out on producing GaN devices Exagan and X-Fab have successfully resolved many of the challenges related to material stress, defectivity and process integration while using standard fabrication equipment and process

TI converts Japanese 200mm fab to GaN, quadruples capacity

X-Fab, Exagan make GaN-on-Si on 200mm wafers
GaN-on-Si Power Device Production Ramp starts at Exagan
Wafer Level Packaging and 3D Integration: X-FAB

Wide-bandgap materials GaN and SiC have proved their value as next-generation semiconductors for power-demanding applications where silicon falls short. SiC-based X-FAB is the first pure-play foundry to provide comprehensive processing technologies for wide bandgap (WBG) materials Silicon Carbide (SiC) and Gallium Nitride Two years after entering into an agreement to develop the technology, X-Fab Silicon Foundries (Erfurt, Germany) and Exagan SA (Grenoble, France) have started production of high-voltage

AIXTRON SE has shipped an AIX G5+ C system to French start-up company Exagan, a producer of advanced materials and high-efficiency gallium nitride (GaN) power Exagan and X-Fab have successfully resolved many of the challenges related to material stress, defectivity and process integration while using standard fabrication equipment and process

SiC & GaN foundry solutions that fit your needs: X-FAB

X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up enabling smaller and more efficient electrical converters, have X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have Erfurt, Germany and Grenoble, France – May 10, 2017 – X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling

Abstract: GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. Following Exaganâ€™s recent announcement of an agreement with X-FAB to produce devices on 200mm wafers, the financing will help support its mission of becoming Exagan 및 x-fab은 표준 제조 장비 및 공정 방법을 사용하면서 재료 스트레스, 결함 및 공정 통합과 관련된 많은 과제를 성공적으로 해결했습니다. 200mm 웨이퍼의 사용과 결합하면 gan-on-silicon

Wafer Level Packaging and 3D Integration: X-FAB

TI has a proprietary GaN-on-Si manufacturing process and has piloted the manufacture of GaN power devices on 300mm wafers although in Aizu production is on

Exagan and X-FAB have successfully resolved many of the challenges related to material stress, defectivity and process integration while using standard fabrication equipment

Its GaN power switches are designed for manufacturing in standard 200-mm wafer fabs to provide high-performance, high-reliability products through a robust supply chain. Following Exagan’s recent announcement of an agreement with X-FAB to produce devices on 200-mm wafers, the financing will help support its mission of becoming Europe’s X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass

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