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Study Of Niobium Thin Films Under Pressure

Di: Ava

Abstract A method is presented for the deposition of ultrathin superconducting NbNx films by atomic layer deposition enhanced by plasma from an organometallic precursor and an H2/Ar gas mixture used as a reactant. The samples obtained are characterized by measurements of resistivity, spectral ellipsometry, atomic force microscopy, and Different methods were used to grow NbN x films. One technique to obtain thin NbN x layer on Nb is by heating of Nb at high temperature in nitrogen gas. Niobium is very reactive with nitrogen, therefore, NbN x samples can be prepared in nitrogen atmosphere by heating the Nb substrate at high temperatures (≥900 °C) [11], [12], [13

(PDF) Morphology of Niobium Films Sputtered at Different Target ...

Abstract Niobium Nitride (NbN) nano-thin films using in various applications owing to NbN’s hardness, have excellent corrosion and abrasion resistance, and thermal stability. The study of the high critical temperature (Tc) of hydrogen compounds under high pressure has resulted in a considerable focus on Bardeen–Cooper–Schrieffer superconductors. Nb has the highest Tc among the elemental metals at ambient pressure, so reviewing Nb films again is worthwhile. In this study, we investigated the factors that determine the Tc of Nb films

Reactive ion etching of niobium

内容提示： Influence of hydrostatic pressure on superconducting properties of niobium thin film Gabriel Pristáša,⁎, Slavomír Gabánia, Emil Gažoa, Vladimír Komanickýb, Matúš Orendáčb, Hoydoo Youc aCentre of Low Temperature Physics, Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 040 01 Košice, Slovakia bCentre of Low

Thin film optimization for superconducting radiofrequency (SRF) accelerating cavities Summary In this paper, the magnetron sputtering method is applied to prepare the Nb3Sn thin film on the oxygen-free copper substrate by the stoichiometric target—the ratio of 3:1 of niobium to tin, so as to explore the effect of different annealing air pressures on the properties of the film in detail.

Argon plasma inductively coupled plasma reactive ion etching study for smooth sidewall thin film lithium niobate waveguide application Abstract We report a systematic comparison of niobium nitride thin films deposited on oxidized silicon substrates by reactive DC magnetron sputtering and reactive high-power impulse magnetron sputtering (HiPIMS).

High-quality single crystalline niobium films are grown on a-plane sapphire in molecular beam epitaxy. The film is single crystalline with a (110) orientation, and both the rocking curve and the reflection high-energy electron difraction pattern demonstrate its high-quality with an atomically smooth surface. By in situ study of its electronic structure, a rather weak electron-electron Metallic thin-films with atomic-level smoothness are critical to enhance the performance of advanced functional devices, particularly in the ultra-short-wave optics, superconductors, and plasmonics. Among these materials, niobium (Nb) stands out due to its exceptional physical and chemical properties, however, conventional Nb films suffer from NbOx thin films have been deposited on silicon (100) and quartz substrates by magnetron sputtering using a metallic Nb target in an optimized

Two Superconductivity States Coincide in Ultrathin Films

  • Niobium oxides films on GaN: Photoelectron spectroscopy study
  • Enhancing the critical temperature of strained Niobium films
  • Optimization of Superconducting Niobium Nitride Thin Films

NbOx thin films demonstrating the analog resistive switching characteristics in planar geometry were fabricated by the droplet-free pulsed laser depos As part of efforts to investigate their potential use with SRF cavities, results from a screening study probing the effects of various dep-osition parameters on the resulting film microstructure, phase formation and subsequent superconducting proper-ties of NbN thin films deposited onto copper are presented. Abstract Niobium pentoxide (Nb2 O 5) based thin films are predominantly used in optical filters, solar cells, electrochromic devices, sensors and microelectronic devices. The temperature-dependent thermophysical properties of Nb2 O 5 films are crucial for the performance and reliability of such devices.

The effect of substrate (c-plane sapphire versus epitaxial graphene/6H-SiC) on the CVD growth and properties of thin 3R NbS 2 films was investigated using niobium (v) pentachloride (NbCl 5) and hydrogen disulfide (H 2 S) as precursors in a hydrogen carrier gas. The growth temperature ranged from 400 ⁰C to 800 ⁰ C and the sulfur to niobium ratio (S/Nb) ranged between 640 and

Electrical resistivity is an important indicator of metal thin film quality. In this study, the influence of argon working pressure on the properties of metal thin films was evaluated, and the thickness effect on the resistivity of metal thin films was investigated. The sputtered thin film resistivity performances of seven metals as a function of argon pressure were measured, and the results

The reactive gases CBrF 3 and CF 4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of We report a systematic comparison of niobium nitride thin films deposited on oxidized silicon substrates by reactive DC magnetron sputtering and reactive high-power impulse magnetron sputtering (HiPIMS). After determining the nitrogen gas concentration that produces the highest superconducting critical temperature for each process, we characterize the dependence of the

Optimization of Superconducting Niobium Nitride Thin Films

  • Third-order optical nonlinearity of niobium-rich lithium niobate thin films
  • The stress of Nb films versus Ar pressure.
  • Superconductivity in the metallic elements at high pressures
  • Studies of niobium thin film produced by energetic vacuum deposition
  • Two Superconductivity States Coincide in Ultrathin Films

Adhesion-strong films of stoichiometrically perfect NbC were obtained by niobium deposition and subsequent annealing. It is more convenient to deposit niobium films and to study them than the alloys or intermetallic compounds of niobium. For the purpose of comparing with theory, the critical current densities of the films were calculated assum ing that the current In this study, we performed measurements of superconducting transition temperature by electrical resistivity measurements of Nb thin film under hydrostatic pressure of up to 30 kbar.

Amorphous niobium oxide thin films were deposited by unbalanced reactive magnetron sputtering under different conditions of pressure (2 to 4 Pa) and oxygen percentage (9, 17, and 23%).

Abstract In this study, radio frequency (RF) biased direct current (DC) magnetron sputtering was used to simultaneously improve the surface roughness and superconducting properties of Nb thin films for Josephson circuits application.

In this study, Nb films were deposited on silicon wafers by magnetron sputtering under different RF bias powers. The effects of the RF Abstract: Intrinsic stress, surface morphology and crystallographic structure of superconducting thin films play an important role in determining the quality of their superconducting properties and the Josephson junctions made of them. Nb thin films deposited by DC magnetron sputtering with various deposition conditions were studied using curvature

We have studied superconducting properties of niobium thin films under hydrostatic pressures up to 3 GPa. The films with thickness of 100 nm were prepared in the high vacuum DC magnetron sputtering system (with critical temperature TC = 8.95 K at ambient pressure). The produced high quality films have been characterized using electrical resistivity and A superconducting probe measures the size of vortices in ultrathin films of niobium diselenide. When the number of atomic layers is only a few (left), the observed vortices are extended. By contrast, thicker samples (right) show vortices that are confined to a small region. The explanation is that surface superconductivity (red) dominates thin films, whereas bulk Abstract Niobium (Nb) thin films were deposited on a Si substrate using magnetron sputtering system by varying the deposition pressure. The effect of deposition pressure on the microstructure, residual stresses, and electrical properties was investigated by systematically varying the deposition pressure from 0.15 to 0.60 Pa.

The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. In this study, we prepared amorphous and polycrystalline niobium-rich LN thin films by magnetron sputtering at room temperature and further annealed in high-purity oxygen, respectively. The third-order nonlinear optical properties of LN films were investigated.

Here, we give practical and simple solutions for the sputter deposition of high-quality nanostructured superconducting Nb thin films. Our systematic study highlights that the quality of thin films and their superconducting properties are dictated by the sputter parameters and lithographic preparation, rather than by a high-end In this study, we report of superconducting properties for Nb 2 N thin films that are grown using a novel substrate mediated synthesis process. In this study, we present a procedure for converting centimeter-scale thin films of niobium oxide (Nb x O y), deposited using physical vapor deposition (PVD), into a continuous, crystalline, mixed-phase (2H/3R) NbS 2 film through sulfurization. We examine the influence of the initial Nb x O y film thickness on the NbS 2 conversion

Here we report a comprehensive study of the influence of magnetron sputtering parameters on the properties of niobium thin films on SiO2 and Nb-based resistors for 1 and 10 kΩ nominal values at room and cryogenic temperatures. The relationship between the mechanical, electrical and cryogenic properties of Nb films is demonstrated. We show that there is a critical value of the